Magnetic memory

ABSTRACT

A magnetic memory includes magnetoresistance effect elements, each of which includes a first ferromagnetic metal layer in which a magnetization direction is fixed, a second ferromagnetic metal layer for a magnetization direction to be changed, and a nonmagnetic layer provided between the first ferromagnetic metal layer and the second ferromagnetic metal layer, a first wiring connected to the first ferromagnetic metal layer of at least one magnetoresistance effect element, spin-orbit torque wirings, each of which is connected to each of the second ferromagnetic metal layers of the magnetoresistance effect elements and extend in a direction intersecting a lamination direction of the magnetoresistance effect element, one first control element connected to the first wiring, one second control element connected to each of first connection points of the spin-orbit torque wirings, and first cell selection elements, each of which is connected to each of second connection points of the spin-orbit torque wirings.

CROSS REFERENCE

This Application is a Continuation Application of U.S. patentapplication Ser. No. 15/781,576, filed Jun. 5, 2018, which is a NationalStage entry of PCT/JP2017/008801, filed Mar. 6, 2017, which claims thebenefit of priority of Japanese Patent Application No. 2016-182359,filed on Sep. 16, 2016, and Japanese Patent Application No. 2016-050266,filed on Mar. 14, 2016. The entire disclosures of the aforementionedapplications are expressly incorporated by reference herein.

TECHNICAL FIELD

The present invention relates to a magnetic memory.

Priority is claimed on Japanese Patent Application No. 2016-050266,filed Mar. 14, 2016, and Japanese Patent Application No. 2016-182359,filed Sep. 16, 2016, the content of which is incorporated herein byreference.

BACKGROUND ART

Giant magnetoresistance (GMR) elements and tunneling magnetoresistance(TMR) elements are known as magnetoresistance effect elements. GMRelements are composed of a multi-layer film including a ferromagneticlayer and a nonmagnetic layer. In TMR elements, an insulating layer(tunnel barrier layer, barrier layer) is used as a nonmagnetic layer.Generally, an element resistance of a TMR element is higher than anelement resistance of a GMR element. However, a magnetoresistance (MR)ratio of a TMR element is higher than an MR ratio of a GMR element.Magnetoresistance effect elements are being focused on as magneticsensors, high frequency components, magnetic heads and nonvolatilerandom access memory (MRAM) elements.

As a writing method for an MRAM, a method of performing writing using amagnetic field caused by a current (using magnetization inversion), amethod of performing writing using a spin transfer torque (SIT)generated by applying a current in a lamination direction ofmagnetoresistance elements (using magnetization inversion), and the likeare known. In the method of performing writing using a magnetic field,there is a limit to a current that can flow into a thin wiring and thereis a risk of writing not being possible when an element size becomessmaller.

On the other hand, in the method of using a spin transfer torque (STT),a current is applied in the lamination direction of themagnetoresistance effect element. A spin-polarized current in oneferromagnetic layer (fixed layer, reference layer) is transferred to theother ferromagnetic layer (free layer, recording layer). According tothis transfer, a spin transfer torque (STT) is applied to magnetizationof the other ferromagnetic layer (free layer, recording layer), andwriting (magnetization inversion) is performed. Therefore, when theelement size is smaller, a current required for writing becomes lower,and there is an advantage that integration becomes easier.

CITATION LIST Non Patent Literature

-   [Non Patent Literature 1]-   I. M. Miron, K. Garello, G. Gaudin, P.-J. Zermatten, M. V.    Costache, S. Auffret, S. Bandiera, B. Rodmacq, A. Schuhl, and P.    Gambardella, Nature, 476, 189 (2011).

SUMMARY OF INVENTION Technical Problem

However, while magnetization inversion of a TMR element using an STT isefficient in consideration of energy efficiency, there is a risk of aninversion current density for causing magnetization inversion beinghigher. The inversion current density is desirably low in considerationof prolonging a lifespan of the TMR element. This similarly applies to aGMR element.

Therefore, in either of the magnetoresistance effect elements of the TMRelement and the GMR element, it is desirable to reduce a density of acurrent that flows into the magnetoresistance effect element.

In recent years, magnetization inversion using a pure spin currentgenerated by spin orbit interaction has been studied (for example, NonPatent Literature 1). A pure spin current generated by spin orbitinteraction induces a spin-orbit torque (SOT) and magnetizationinversion is caused by the SOT. The pure spin current is generated whenthe same numbers of upward spin electrons and downward spin electronsflow in opposite directions. Therefore, an electric charge flow iscanceled out and the current becomes zero. That is, in amagnetoresistance effect element using an SOT, a current that flows inthe lamination direction of the magnetoresistance effect element becomeszero, which is expected in consideration of prolonging a lifespan.

However, for magnetoresistance effect elements using an SOT generated bya spin orbit interaction, research on applications in view of practicaluses has only just begun. In actual production of magnetoresistanceeffect elements using an SOT as a magnetic memory, various problems suchas how to perform suitable integration need to be taken into account.

The present invention has been realized in view of the above problems,and an object of the present invention is to provide a magnetic memoryin which magnetoresistance effect elements using an SOT generated by aspin orbit interaction can be efficiently integrated.

Solution to Problem

In order to address the above problems, the present invention providesthe following aspects.

A magnetic memory according to a first aspect includes a plurality ofmagnetoresistance effect elements, each of which includes a firstferromagnetic metal layer in which a magnetization direction is fixed, asecond ferromagnetic metal layer for a magnetization direction to bechanged, and a nonmagnetic layer that is provided between the firstferromagnetic metal layer and the second ferromagnetic metal layer; afirst wiring that is connected to the first ferromagnetic metal layer ofat least one magnetoresistance effect element among the plurality ofmagnetoresistance effect elements; a plurality of spin-orbit torquewirings, each of which is connected to each of the second ferromagneticmetal layers of the plurality of magnetoresistance effect elements andextends in a direction intersecting a lamination direction of themagnetoresistance effect elements; at least one first control elementthat is connected to the first wiring and is configured to control acurrent that flows into the magnetoresistance effect element; at leastone second control element that is connected to each of first connectionpoints of the plurality of spin-orbit torque wirings and is configuredto control a current that flows into the spin-orbit torque wirings; anda plurality of first cell selection elements, each of which is connectedto each of second connection points of the plurality of spin-orbittorque wirings, respectively.

The magnetoresistance effect element may be interposed between the firstconnection point and the second connection point when viewed from thelamination direction.

The magnetic memory may further include a plurality of second cellselection elements, each of which is connected to each of thirdconnection points of the plurality of spin-orbit torque wirings, and thethird connection points may be provided at positions at which the thirdconnection points overlap the magnetoresistance effect element whenviewed from the lamination direction.

The magnetic memory may further include a data erasing element that isconnected to each of the second connection points of the plurality ofspin-orbit torque wirings and is configured to collectively controldirections of magnetization of the second ferromagnetic metal layers ofthe plurality of magnetoresistance effect elements.

The spin-orbit torque wirings may include a nonmagnetic metal having a delectron or a f electron in the outermost shell and having an atomicnumber of 39 or higher.

When the first wiring is connected to the plurality of magnetoresistanceeffect elements, a rectifying element may be provided between each ofthe plurality of magnetoresistance effect elements and the first controlelement.

A potential of the first control element may be higher than a potentialof the second control element.

An area resistance of the nonmagnetic layer may be higher than 1000Ω·μm².

A magnetic memory according to a second aspect includes amagnetoresistance effect element that includes a first ferromagneticmetal layer in which a magnetization direction is fixed, a secondferromagnetic metal layer for a magnetization direction to be changed,and a nonmagnetic layer that is provided between the first ferromagneticmetal layer and the second ferromagnetic metal layer; a plurality ofdrive elements, each of which is connected to the second ferromagneticmetal layer of the magnetoresistance effect element and includesspin-orbit torque wirings extending in a direction intersecting alamination direction of the magnetoresistance effect element; aplurality of first control elements that are connected to each of thefirst ferromagnetic metal layers of the plurality of drive elements; atleast one second control element that is connected to a first connectionpoint of spin-orbit torque wirings of at least two drive elements amongthe plurality of drive elements; and a plurality of first cell selectionelements, each of which is connected to each of second connection pointsof the spin-orbit torque wirings of the plurality of drive elements.

A magnetic memory according to a third aspect includes amagnetoresistance effect element that includes a first ferromagneticmetal layer in which a magnetization direction is fixed, a secondferromagnetic metal layer for a magnetization direction to be changed,and a nonmagnetic layer that is provided between the first ferromagneticmetal layer and the second ferromagnetic metal layer; a plurality ofdrive elements, each of which is connected to each of the secondferromagnetic metal layer of the magnetoresistance effect element andincludes the spin-orbit torque wirings extending in a directionintersecting a lamination direction of the magnetoresistance effectelement; at least one first control element that is connected to thefirst ferromagnetic metal layer of at least two drive elements among theplurality of drive elements; a plurality of second control elements,each of which is connected to each of the first connection points,respectively of the spin-orbit torque wirings of the plurality of driveelements; and a plurality of first cell selection elements, each ofwhich is connected to each of second connection points of the spin-orbittorque wirings of the plurality of drive elements, respectively.

Advantageous Effects of Invention

According to the magnetic memory according to the above aspects, it ispossible to efficiently integrate magnetoresistance effect elementsusing a pure spin current generated by spin orbit interaction.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a circuit diagram of a magnetic memory according to a firstembodiment.

FIG. 2 is a circuit diagram of another example of a magnetic memoryaccording to another example of the first embodiment.

FIG. 3 is a schematic diagram of a circuit structure of the magneticmemory according to the first embodiment.

FIG. 4 is a schematic cross-sectional view of a main part in thevicinity of a magnetoresistance effect element of the magnetic memoryaccording to the first embodiment.

FIG. 5 is a schematic diagram for explaining a spin Hall effect.

FIG. 6 is a schematic diagram of another example of the circuitstructure of the magnetic memory according to the first embodiment.

FIG. 7 is a schematic perspective view of another example of the circuitstructure of the magnetic memory according to the first embodiment.

FIG. 8 is a schematic diagram of a circuit structure of a magneticmemory in which a rectifying element is provided.

FIG. 9 is a schematic diagram of a circuit structure of a magneticmemory according to a second embodiment.

FIG. 10 is a schematic perspective view of a circuit structure of themagnetic memory according to the second embodiment.

FIG. 11 is a schematic cross-sectional view of a main part in thevicinity of a magnetoresistance effect element of the magnetic memoryaccording to the second embodiment.

FIG. 12 is a schematic diagram of a circuit structure of a magneticmemory according to a third embodiment.

FIG. 13 is a schematic perspective view of a circuit structure of themagnetic memory according to the third embodiment.

FIG. 14 is a schematic perspective view of a circuit structure of amagnetic memory according to a fourth embodiment.

DESCRIPTION OF EMBODIMENTS

Embodiments of the present invention will be appropriately describedbelow in detail with reference to the drawings. In the drawings used inthe following description, in order to facilitate understanding offeatures of the present invention, feature parts are enlarged forconvenience of illustration in some cases, and size ratios and the likebetween components may be different from actual components. Materials,sizes, and the like exemplified in the following description areexamples not limiting the present invention, and they can beappropriately changed within a range in which effects of the presentinvention are obtained.

First Embodiment

<Magnetic Memory (Circuit Diagram)>

FIG. 1 and FIG. 2 are circuit diagrams of a magnetic memory according tothe present embodiment. A magnetic memory 200 includes a plurality ofdrive elements 100. The drive element 100 includes a magnetoresistanceeffect element 10 and a spin-orbit torque wiring 20. In the circuits inFIG. 1 and FIG. 2, the spin-orbit torque wiring 20 is shown as resistors21 and 22. Current leakage during writing and reading is low in both themagnetic memory 200 shown in FIG. 1 and a magnetic memory 201 shown inFIG. 2, which function as magnetic memories.

In the magnetic memory 200 shown in FIG. 1 and the magnetic memory 201shown in FIG. 2, a first control element 13, a second control element14, and a first cell selection element 15 are connected to one driveelement 100. Known transistors such as a field-effect transistor (FET)are used for such control elements.

When the first control element 13 and the first cell selection element15 are operated (are brought into an “ON” state), a current can flow ina lamination direction of the magnetoresistance effect element 10, and achange in the resistance value of the magnetoresistance effect element10 can be read. In addition, when the second control element 14 and thefirst cell selection element 15 are operated (are brought into an “ON”state), a current can flow into the spin-orbit torque wiring 20, andmagnetization inversion (writing) of the magnetoresistance effectelement 10 can be performed.

In the magnetic memory 200 shown in FIG. 1, the second control element14 is connected over at least two of the drive elements 100. Therefore,it is sufficient to provide one second control element 14 at an end ofan integrated substrate and the like. In other words, the second controlelement 14 does not greatly influence the integration of the magneticmemory 200.

Similarly, in the magnetic memory 201 shown in FIG. 2, the first controlelement 13 is connected over at least two of the drive elements 100.Therefore, it is sufficient to provide one first control element 13 atan end of an integrated substrate and the like. In other words, thefirst control element 13 does not greatly influence the integration ofthe magnetic memory 201.

In any case, a unit cell including one drive element 100 and two controlelements influences the integration of the magnetic memory. The twocontrol elements are the first control element 13 and the first cellselection element 15 in the magnetic memory 200 shown in FIG. 1, and arethe second control element 14 and the first cell selection element 15 inthe magnetic memory 201 shown in FIG. 2.

In order to drive the drive elements 100, at least three controlelements are necessary. However, in consideration of a degree ofintegration, it is sufficient to consider disposition of a unit cellincluding one drive element and two control elements.

(Circuit Structure)

FIG. 3 is a schematic diagram schematically showing a circuit structureof a magnetic memory according to a first embodiment. The schematicdiagram shown in FIG. 3 corresponds to the circuit diagram shown in FIG.1.

The magnetic memory 200 according to the first embodiment includes themagnetoresistance effect element 10, a first wiring 11, the spin-orbittorque wiring 20, the first control element 13, the second controlelement 14, and the first cell selection element 15.

<Magnetoresistance Effect Element>

FIG. 4 is a schematic cross-sectional view of an enlarged main part inthe vicinity of the magnetoresistance effect element of the magneticmemory according to the first embodiment.

As shown in FIG. 4, the magnetoresistance effect element 10 includes afirst ferromagnetic metal layer 1, a nonmagnetic layer 2, and a secondferromagnetic metal layer 3. The nonmagnetic layer 2 is interposedbetween the first ferromagnetic metal layer 1 and the secondferromagnetic metal layer 3.

In FIG. 4, an insulating part 5, a second wiring 16, and a third wiring17 are shown together. The insulating part 5 insulates a gap between thefirst wiring 11 and the spin-orbit torque wiring 20 with themagnetoresistance effect element 10 therebetween. The second wiring 16is a wiring that is provided between a first connection point 20A of thespin-orbit torque wiring 20 and the second control element 14. The thirdwiring 17 is a wiring that is provided between a second connection point20B of a spin-orbit torque wiring 12 and the first cell selectionelement 15.

The magnetization of the first ferromagnetic metal layer 1 is fixed inone direction. When a direction of magnetization of the secondferromagnetic metal layer 3 relatively changes with respect to adirection of magnetization of the first ferromagnetic metal layer 1, itfunctions as the magnetoresistance effect element 10. In application toa coercive force difference type (pseudo spin valve type) MRAM, acoercive force of the first ferromagnetic metal layer is larger than acoercive force of the second ferromagnetic metal layer. In applicationto an exchange bias type (spin valve type) MRAM, the magnetization ofthe first ferromagnetic metal layer is fixed by exchange coupling withan anti-ferromagnetic layer.

The magnetoresistance effect element 10 is a tunneling magnetoresistance(TMR) element when the nonmagnetic layer 2 is made of an insulator, andis a giant magnetoresistance (GMR) element when the nonmagnetic layer 2is made of a metal.

For the magnetoresistance effect element 10, a configuration of a knownmagnetoresistance effect element can be used. For example, each layer ofthe magnetoresistance effect element 10 may be composed of a pluralityof layers, and may include another layer such as an anti-ferromagneticlayer for fixing a magnetization direction of the first ferromagneticmetal layer 1.

The first ferromagnetic metal layer 1 is called a fixed layer or areference layer, and the second ferromagnetic metal layer 3 is called afree layer or a recording layer.

The first ferromagnetic metal layer 1 and the second ferromagnetic metallayer 3 may be either an in-plane magnetization film of which amagnetization direction is an in-plane direction that is parallel to thelayer or a perpendicular magnetization film of which a magnetizationdirection is a direction perpendicular to the layer.

A known material can be used for the first ferromagnetic metal layer 1.For example, a metal selected from the group consisting of Cr, Mn, Co,Fe and Ni or an alloy containing at least one of such metals andexhibiting ferromagnetism can be used for the first ferromagnetic metallayer 1. In addition, an alloy containing such a metal and at least oneelement of B, C, and N can be used for the first ferromagnetic metallayer 1. Specifically, Co—Fe and Co—Fe—B may be exemplified.

In order to obtain a higher output, a Heusler alloy such as Co₂FeSi ispreferably used for the first ferromagnetic metal layer 1. A Heusleralloy contains an intermetallic compound having a chemical compositionof X₂YZ. In the periodic table, X is a transition metal element from theCo, Fe, Ni, or Cu groups or a noble metal element, Y is a transitionmetal from the Mn, V, Cr or Ti groups or an element of type X, and Z isa typical element from Group III to Group V. For example, Co₂FeSi,Co₂MnSi and Co₂Mn_(1-a)Fe_(a)Al_(b)Si_(1-b) may be exemplified.

An anti-ferromagnetic layer containing an antiferromagnetic materialsuch as IrMn and PtMn may be adjacent to the first ferromagnetic metallayer 1. A coercive force of the first ferromagnetic metal layer 1 withrespect to the second ferromagnetic metal layer 3 then becomes larger.In order to prevent a leakage magnetic field of the first ferromagneticmetal layer 1 from influencing the second ferromagnetic metal layer 3,the magnetoresistance effect element 10 may have a structure ofsynthetic ferromagnetic bonding.

When a direction of magnetization of the first ferromagnetic metal layer1 is made perpendicular to a lamination surface, a laminated filmincluding Co and Pt is preferably used. For example, the firstferromagnetic metal layer 1 may be [Co (0.24 nm)/Pt (0.16 nm)]₆/Ru (0.9nm)/[Pt (0.16 nm)/Co (0.16 nm)]₄/Ta (0.2 nm)/FeB (1.0 nm).

For the second ferromagnetic metal layer 3, a ferromagnetic material,and particularly, a soft magnetic material, can be applied. For example,for the second ferromagnetic metal layer 3, a metal selected from thegroup consisting of Cr, Mn, Co, Fe and Ni, an alloy containing at leastone of such metals, an alloy containing such a metal and at least oneelement of B, C, and N, and the like may be exemplified. As specificmaterials according to this, Co—Fe, Co—Fe—B, and Ni—Fe may beexemplified.

When a direction of magnetization of the second ferromagnetic metallayer 3 is made perpendicular to a lamination surface, the thickness ofthe second ferromagnetic metal layer 3 is preferably 2.5 nm or less. Atan interface between the second ferromagnetic metal layer 3 and thenonmagnetic layer 2, perpendicular magnetic anisotropy can be applied tothe second ferromagnetic metal layer 3. Since the effect of theperpendicular magnetic anisotropy is reduced when the film thickness ofthe second ferromagnetic metal layer 3 is thicker, the film thickness ofthe second ferromagnetic metal layer 3 is preferably thinner.

For the nonmagnetic layer 2, a known material can be used.

For example, when the nonmagnetic layer 2 is made of an insulator (inthe case of a tunnel barrier layer), Al₂O₃, SiO₂, Mg, MgAl₂O₄ or thelike can be used for a material thereof. In addition to these materials,a material in which some of Al, Si, and Mg is substituted with Zn, Be,or the like can be used for the nonmagnetic layer 2. Among suchmaterials, since MgO and MgAl₂O₄ are materials that can realize acoherent tunnel, spins can be transmitted efficiently.

When the nonmagnetic layer 2 is made of a metal, Cu, Au, Ag, or the likecan be used as the material.

The magnetoresistance effect element 10 may include a known layer otherthan the first ferromagnetic metal layer 1, the nonmagnetic layer 2 andthe second ferromagnetic metal layer 3. For example, a cap layer forimproving a stability of a crystal orientation and magnetic propertiesand the like may be included.

<First Wiring>

The first wiring 11 is provided in at least one magnetoresistance effectelement 10 among the plurality of magnetoresistance effect elements 10.The first wiring 11 is electrically connected to the first ferromagneticmetal layer 1 of each of the plurality of magnetoresistance effectelements 10.

The first wiring 11 is not particularly limited as long as it is ahighly conductive material. For example, aluminum, silver, copper, gold,or the like can be used.

<Spin-Orbit Torque Wiring>

The spin-orbit torque wiring 20 extends in a direction intersecting alamination direction of the magnetoresistance effect element 10. Thespin-orbit torque wiring 20 is provided in each of the plurality ofmagnetoresistance effect elements 10. The spin-orbit torque wiring 20 isconnected to the second ferromagnetic metal layer 3 of each of themagnetoresistance effect elements 10.

The spin-orbit torque wiring 20 is electrically connected to a powersupply that supplies a current to the spin-orbit torque wiring 20, andfunctions as a spin injection unit configured to inject a pure spincurrent into the magnetoresistance effect element 10 together with thepower supply.

The spin-orbit torque wiring 20 may be directly connected to the secondferromagnetic metal layer 3, and may be connected thereto with anotherlayer therebetween.

The spin-orbit torque wiring 20 contains a material in which a pure spincurrent is generated due to a spin Hall effect when a current flows. Itis sufficient that the spin-orbit torque wiring 20 has a configurationin which a pure spin current can be generated in the spin-orbit torquewiring 20. Therefore, the present invention is not limited to aconfiguration including a single element, and a configuration includinga part made of a material in which a pure spin current is generated anda part made of a material in which no pure spin current is generated maybe used.

The spin Hall effect is a phenomenon in which a pure spin current isinduced in a direction perpendicular to a direction of a current basedon spin orbit interaction when the current flows in the material.

FIG. 5 is a schematic diagram for explaining a spin Hall effect. Amechanism in which a pure spin current is generated due to a spin Halleffect will be described with reference to FIG. 5.

As shown in FIG. 5, when a current I flows in an extension direction ofthe spin-orbit torque wiring 20, the upward spin S⁺ and the downwardspin S⁻ are each bent in a direction perpendicular to the current. Thenormal Hall effect and the spin Hall effect are the same in that anelectric charge (electron) that is mobile (moves) is bent in a motion(movement) direction. On the other hand, in the normal Hall effect,charged particles that are mobile in a magnetic field receive a Lorentzforce and a motion direction is bent, whereas, in the spin Hall effect,although there is no magnetic field, if only an electron moves (acurrent flows), a movement direction is bent, which is a largedifference.

In a nonmagnetic component (a material which is not a ferromagneticcomponent), the number of electrons with an upward spin S⁺ and thenumber of electrons with a downward spin S⁻ are the same. In thedrawing, the number of electrons with an upward spin S⁻ moving in anupward direction and the number of electrons with a downward spin S⁻moving in a downward direction are the same. Therefore, a current as anet flow of electric charges is zero. This current-less spin current isparticularly called a pure spin current.

On the other hand, when a current flows in a ferromagnetic component,the fact that upward spin electrons and downward spin electrons are bentin opposite directions is the same. However, the ferromagnetic componentis in a state in which one of the numbers of upward spin electrons ordownward spin electrons is large. Therefore, as a result, a net flow ofelectric charges occurs (a voltage is generated). Therefore, a materialincluding only a ferromagnetic component is not included as a materialof the spin-orbit torque wiring 20.

When a flow of electrons with an upward spin S⁺ is represented by J₇, aflow of electrons with a downward spin S⁻ is represented by J_(↓), and aspin current represented by J_(S), J_(S)=J_(↑)−J_(↓) is defined. In FIG.5, as a pure spin current, J_(S) flows in the upward direction in thedrawing. Here, J_(S) is a flow of electrons with a polarizability of100%.

In FIG. 5, when a ferromagnetic component is brought into contact withthe spin-orbit torque wiring 20, a pure spin current diffuses and flowsinto the ferromagnetic component. That is, when a current flows into thespin-orbit torque wiring 20 and a pure spin current is generated, thespin diffuses due to the pure spin current in the second ferromagneticmetal layer 3 in contact with the spin-orbit torque wiring 20. When thespin is injected into the second ferromagnetic metal layer 3 due to thepure spin current, magnetization inversion of the second ferromagneticmetal layer which is a free layer occurs due to a spin-orbit torque(SOT) effect.

The spin-orbit torque wiring 20 may include a nonmagnetic heavy metal.Here, “heavy metal” is used to refer to a metal having a specificgravity equal to or higher than that of yttrium. The spin-orbit torquewiring 20 may be made of only a nonmagnetic heavy metal.

The nonmagnetic heavy metal is preferably a nonmagnetic metal having a delectron or a f electron in the outermost shell and having a high atomicnumber of 39 or higher. For example, as the nonmagnetic heavy metal, ametal or an alloy containing at least one of metal atoms selected fromthe group consisting of tungsten, rhenium, osmium and iridium may beexemplified.

In such nonmagnetic heavy metals, spin orbit interaction causing a spinHall effect is strong. Generally, when a current flows in a metal, allelectrons move in a direction opposite to that of the current regardlessof the direction of the spin. On the other hand, since a nonmagneticmetal having a d electron or a f electron in the outermost shell andhaving a high atomic number has a strong spin orbit interaction, amovement direction of electrons depends on a spin direction of electronsdue to the spin Hall effect and a pure spin current J_(S) is easilygenerated.

Since tungsten, rhenium, osmium and iridium have 5d electrons in theoutermost shell and 5d orbitals are degenerate, they have a largeorbital angular momentum. Therefore, in such materials, spin orbitinteraction causing a spin Hall effect is stronger and a spin currentcan be efficiently generated.

The spin-orbit torque wiring 20 may contain a magnetic metal. Themagnetic metal refers to a ferromagnetic metal or an anti-ferromagneticmetal. When a small amount of magnetic metal is contained in thenonmagnetic metal, the spin orbit interaction is enhanced, and a spincurrent generation efficiency with respect to a current that flows intothe spin-orbit torque wiring 20 can be increased. The spin-orbit torquewiring 20 may be made of only an anti-ferromagnetic metal.

The spin orbit interaction is caused by the inherent internal fieldgenerated by a substance of a spin-orbit torque wiring material.Therefore, a pure spin current is generated also in the nonmagneticmaterial. When a small amount of magnetic metal is added to thespin-orbit torque wiring material, electron spins through which themagnetic metal itself flows are scattered and a spin current generationefficiency is improved. However, when an amount of the magnetic metaladded excessively increases, the generated pure spin current isscattered by the added magnetic metal, and as a result, the spin currentdecreases. Therefore, a molar ratio of the added magnetic metal that issufficiently smaller than a molar ratio of a main component of a purespin generator in the spin-orbit torque wiring 20 is preferable. As ageneral rule, a molar ratio of the added magnetic metal is preferably 3%or less of the molar ratio of the main component of the pure spingenerator.

The spin-orbit torque wiring 20 may include a topological insulator. Thespin-orbit torque wiring 20 may be made of only a topological insulator.A topological insulator is a substance of which the inside is aninsulator or a high resistor component and has a surface that is in aspin-polarized metal state. In the substance, an internal magnetic fieldcalled spin orbit interaction occurs. A substance in which a newtopological phase develops due to a spin orbit interaction effect evenif there is no external magnetic field is a topological insulator. Atopological insulator can generate a pure spin current with highefficiency according to a strong spin orbit interaction and collapse ofinversion symmetry at the edge.

As the topological insulator, for example, SnTe,Bi_(1.5)Sb_(0.5)Te_(1.7)Se_(1.3), TIBiSe₂, Bi₂Te₃, and (Bi_(1-x)Sb)₂Te₃are preferable. Such topological insulators can generate a spin currentwith high efficiency.

<First Control Element, Second Control Element, First Cell SelectionElement>

As shown in FIG. 3 and FIG. 4, the first control element 13 is connectedto the first wiring 11. The first control element 13 is connected to anexternal power supply (not shown) and is configured to control a currentthat flows into the first wiring 11.

A plurality of first control elements 13 are not necessarily providedand the first wirings 11 may be connected to each other and only onefirst control element 13 may be provided. FIG. 6 is a schematic diagramof another example of a circuit structure of a magnetic memory 202according to the first embodiment. FIG. 7 is a schematic perspectiveview of another example of a circuit structure of the magnetic memory202 according to the first embodiment. FIG. 6 corresponds to a crosssection taken along the first wiring 11 in FIG. 7.

As shown in FIG. 7, the first control element 13 in the magnetic memory202 controls to which row of the plurality of magnetoresistance effectelements 10 disposed in a matrix form a current is applied. Therefore,when a current is applied to the first control element 13, a currentreaches the plurality of magnetoresistance effect elements 10 throughthe first wiring 11, and a magnetoresistance effect element 10 in whicha current flows can be controlled by the first cell selection element tobe described below.

On the other hand, when the first wiring 11 is connected to theplurality of magnetoresistance effect elements 10, a leakage current maybe generated along the wiring. For example, a current applied from thesecond control element 14 is a flow of a current that appropriatelyflows into the first cell selection element 15. However, some of thecurrent can flow into the adjacent magnetoresistance effect element 10through the magnetoresistance effect element 10 and the first wiring 11.In this case, this current causes noise in the magnetoresistance effectelement 10.

Therefore, when the first wiring 11 is connected to the plurality ofmagnetoresistance effect elements 10, it is preferable to provide amethod of preventing noise. FIG. 8 is a schematic diagram of a circuitstructure of a magnetic memory 203 in which a rectifying element 30 isprovided. As shown in FIG. 8, when the rectifying element 30 is providedbetween each of the magnetoresistance effect elements 10 and the firstcontrol element 13, a direction in which the current flows can belimited. When the direction in which the current flows is controlled, itis possible to prevent a leakage current from being generated and reducethe occurrence of noise.

A known diode can be used as the rectifying element 30. As long as therectifying element 30 is arranged between the magnetoresistance effectelement 10 and the first control element 13, the present invention isnot limited to a case in which the rectifying element 30 is arrangedbetween the first wiring 11 and the magnetoresistance effect element 10shown in FIG. 8. For example, the rectifying element 30 may be providedalong the way of the first wiring 11.

As another method of preventing noise, a potential of the first controlelement 13 may be set to be higher than a potential of the secondcontrol element 14. The first control element 13 controls a current thatflows in a lamination direction of the magnetoresistance effect element10 and the second control element 14 controls a current that flows inthe extension direction of the spin-orbit torque wiring 20. Therefore,operations of the first control element 13 and the second controlelement 14 are independent of each other, and respective potentials canbe freely set as long as they are higher than that of the first cellselection element 15. When a potential of the first control element 13is higher than a potential of the second control element 14, a directionin which the current can flow is regulated to one direction, and thesame effects as when the rectifying element 30 is provided can beobtained.

The second control element 14 is connected to the first connection point20A of each of the plurality of spin-orbit torque wirings 20 through thesecond wiring 16. The second control element 14 is connected to anexternal power supply (not shown) and is configured to control a currentthat flows into the spin-orbit torque wiring 20. In FIG. 7, the secondcontrol element 14 controls to which column of the plurality ofmagnetoresistance effect elements 10 disposed in a matrix form a currentis applied. Like the first control element 13, a plurality of secondcontrol elements 14 are not necessarily provided. For example, thesecond wirings 16 may be connected to each other and only one secondcontrol element 14 may be provided. In this case, a spin-orbit torquewiring 12 to which a current is applied can be controlled by the firstcell selection element 15 to be described below.

In FIG. 1 to FIG. 8, the second wiring 16 that extends from one secondcontrol element 14 branches on the way, and is connected to each of thespin-orbit torque wirings 20. That is, since the number of secondcontrol elements 14 can be set to be smaller than the number ofmagnetoresistance effect elements 10, it is possible to improve theintegration of the magnetic memory.

The first cell selection element 15 is connected to a second connectionpoint 12B of each of the plurality of spin-orbit torque wirings 20through the third wiring 17.

One first cell selection element 15 is provided for onemagnetoresistance effect element 10. The first cell selection element 15controls a magnetoresistance effect element 10 in which a write currentand a read current flow. The first cell selection element 15 isgrounded.

A known switching element can be used as the first control element 13,the second control element 14, and the first cell selection element 15.For example, a transistor element represented by a field effecttransistor or the like can be used.

For the second wiring 16 and the third wiring 17, a material used for ageneral wiring can be used. For example, aluminum, silver, copper, gold,or the like can be used.

As shown in FIG. 4, preferably, the magnetoresistance effect element 10is provided at a position between the first connection point 20A and thesecond connection point 20B when viewed in a lamination direction of themagnetoresistance effect element 10. In other words, themagnetoresistance effect element 10 is interposed between the firstconnection point 20A and the second connection point 20B when viewed inthe lamination direction.

A current supplied from the second wiring 16 flows into the spin-orbittorque wiring 20 through the first connection point 20A. A current thatflows into the spin-orbit torque wiring 20 flows into the third wiring17 through the second connection point 20B. That is, a main direction ofa current that flows into the spin-orbit torque wiring 20 is a directionfrom the first connection point 20A toward the second connection point20B. When the magnetoresistance effect element 10 is arranged betweenthe first connection point 20A and the second connection point 20B, themagnetoresistance effect element 10 is present at a position in which itis perpendicular to the main direction of the current, and the spin canthen be efficiently supplied to the magnetoresistance effect element 10by a pure spin current.

The configuration of the magnetic memory according to the presentembodiment has been described above. A write operation and a readoperation of the magnetic memory 200 will be described below withreference to FIG. 3.

<Write Operation>

There are two types of write operation.

The first method is a method in which writing (magnetization inversion)is performed using only a spin-orbit torque (SOT) induced by a pure spincurrent. The second method is a method in which writing according to aspin transfer torque (STT) or a voltage applied to the magnetoresistanceeffect element 10 is assisted by a spin-orbit torque (SOT).

First, the first method will be described.

In the first method, writing is controlled by the second control element14 and the first cell selection element 15.

The second control element 14 is opened (connected), and the first cellselection element 15 to be opened is selected. The second controlelement 14 is connected to an external power supply and the first cellselection element 15 is grounded. Therefore, a first current path inwhich a current flows into the second control element 14, the secondwiring 16, the spin-orbit torque wiring 20, the third wiring 17, and theselected first cell selection element 15 in that order is formed.

In the first current path, a current that flows into the spin-orbittorque wiring 20 induces a spin current. The spin current induced in thespin-orbit torque wiring 20 flows in the second ferromagnetic metallayer 3 (refer to FIG. 4) and applies a spin-orbit torque (SOT) to thespin in the second ferromagnetic metal layer 3. As a result, a directionof magnetization of the second ferromagnetic metal layer 3 of themagnetoresistance effect element 10 (hereinafter also referred to as a“selected cell”) in which data is written is inverted. That is, when acurrent flows through the first current path, a write operation of theselected cell is performed.

Next, the second method will be described.

In the second method, writing is controlled by the first control element13, the second control element 14, and the first cell selection element15.

The first control element 13 and the second control element 14 areopened (connected), and the first cell selection element 15 to be openedis selected. The first control element 13 and the second control element14 are connected to an external power supply, and the first cellselection element 15 is grounded. Therefore, two current paths areformed.

As in the first method, the first current path is a path in which acurrent flows into the second control element 14, the second wiring 16,the spin-orbit torque wiring 20, the third wiring 17, and the selectedfirst cell selection element 15 in that order.

The second current path is a path in which a current flows into thefirst control element 13, the first wiring 11, the magnetoresistanceeffect element 10, the spin-orbit torque wiring 20, the third wiring 17,and the selected first cell selection element 15 in that order.

As in the first method, a current that flows through the first currentpath induces a spin-orbit torque (SOT). Since a current that flowsthrough the second current path flows in a lamination direction of themagnetoresistance effect element 10, a spin transfer torque (STT) isinduced. As a result, a direction of magnetization of the secondferromagnetic metal layer 3 of the selected cell receives a spin-orbittorque and spin transfer torque and is inverted. That is, a writeoperation of the selected cell is performed by an STT and SOT.

Here, when a resistance of the magnetoresistance effect element 10 ishigh, an amount of a current that flows through the second current pathis small. For example, when an area resistance of the nonmagnetic layer2 constituting the magnetoresistance effect element 10 is higher than1000 Ω·μm², an amount of a current that flows through the second currentpath is very small. In this case, there is a potential difference in thelamination direction of the magnetoresistance effect element 10, and avoltage is applied to the magnetoresistance effect element 10. It isknown that magnetization inversion is caused by a voltage difference,and a voltage difference applied to the magnetoresistance effect element10 may be used.

<Read Operation>

The read operation is performed by applying a current to the abovesecond current path. The flowing current is a current that is notsufficient to invert a direction of magnetization of the secondferromagnetic metal layer 3.

In the magnetoresistance effect element, the resistance value differsbetween a selected cell in which writing is performed and a non-selectedcell in which no writing is performed. This is because the resistancevalue of the magnetoresistance effect element 10 in the laminationdirection differs between a case in which directions of magnetization ofthe first ferromagnetic metal layer 1 and the second ferromagnetic metallayer 3 are opposite (antiparallel) and a case in which directions ofmagnetization of the first ferromagnetic metal layer 1 and the secondferromagnetic metal layer 3 are the same (parallel).

The read operation is performed by reading a difference betweenresistance values of the magnetoresistance effect elements 10 as apotential difference between the first control element 13 and each ofthe first cell selection elements 15.

<Method of Producing Magnetic Memory>

The magnetic memory according to the present embodiment can be producedusing a known method. A method of producing a magnetic memory will bedescribed below.

A substrate on which a magnetic memory is fabricated is prepared. Asubstrate having excellent flatness is preferable. In order to obtain asurface having excellent flatness, for example, Si, or AlTiC, can beused as a material.

Next, the first wiring 11 is patterned on the substrate. The patterningis performed by, for example, a technique such as photolithography. Thefirst ferromagnetic metal layer 1, the nonmagnetic layer 2, and thesecond ferromagnetic metal layer 3 are laminated in that order on thesubstrate on which the first wiring 11 is patterned. An underlayer maybe provided between the substrate and the first ferromagnetic metallayer. The underlayer can control a crystal orientation of the layersincluding the first ferromagnetic metal layer 1 laminated on thesubstrate and a crystallinity such as a crystal grain size.

Such layers can be formed using, for example, a magnetron sputteringdevice. When the magnetoresistance effect element is a TMR element, thetunnel barrier layer can be formed when, for example, a metal thin filmof about 0.4 to 2.0 nm containing aluminum and divalent cations of aplurality of nonmagnetic elements is sputtered on the firstferromagnetic metal layer 1 and oxidized by plasma oxidation or oxygenintroduction, and additionally heated. As a film formation method, inaddition to a magnetron sputtering method, thin film forming methodssuch as a vapor deposition method, a laser ablation method, and an MBEmethod can be used.

Next, a protective film such as a resist is provided on a part on whichthe magnetoresistance effect element 10 is desired to be fabricated, andunnecessary parts are removed using an ion milling method or a reactiveion etching (RIE) method. The removed unnecessary parts are filled withthe insulating part 5 such as a resist and the upper surface is thenflattened. According to the flattening, it is possible to reduce spinscattering at the interface between the spin-orbit torque wiring 20 tobe formed next and the magnetoresistance effect element 10.

Next, a material constituting the spin-orbit torque wiring 20 is formedon the upper surface of the flattened magnetoresistance effect element10. Sputtering or the like can be used for film formation.

Finally, the second wiring 16, the third wiring 17, the first controlelement 13, the second control element 14, and the first cell selectionelement 15 are fabricated.

The second wiring 16 and the third wiring 17 are fabricated only in adesired part by patterning or the like. The first control element 13,the second control element 14 and the first cell selection element 15are obtained by fabricating a switching element such as a transistorusing a known method. When a substrate to be fabricated is a substrateof a semiconductor such as silicon, the first control element 13, thesecond control element 14, and the first cell selection element 15 canbe fabricated on the same substrate.

As described above, according to the magnetic memory of the presentembodiment, the number of first control elements 13, second controlelements 14 and first cell selection elements 15 for selecting themagnetoresistance effect element 10 can be reduced. That is,magnetoresistance effect elements using a pure spin current generated byspin orbit interaction can be efficiently integrated.

A top pin structure in which the second ferromagnetic metal layer 3whose magnetization direction varies is on the side of the substrate hasbeen described above.

The magnetoresistance effect element 10 according to the presentembodiment is not limited to a top pin structure, and may have a bottompin structure in which the first ferromagnetic metal layer 1 which is afixed layer is on the side of the substrate.

Second Embodiment

FIG. 9 is a schematic diagram of a circuit structure of a magneticmemory according to a second embodiment. FIG. 10 is a schematicperspective view of the circuit structure of the magnetic memoryaccording to the second embodiment. In addition, FIG. 11 is a schematiccross-sectional view of a main part in the vicinity of amagnetoresistance effect element of the magnetic memory according to thesecond embodiment. Components the same as those in the first embodimentwill be denoted with the same reference numerals.

A magnetic memory 204 according to the second embodiment is differentfrom the magnetic memory 200 according to the first embodiment in that afourth wiring 40 and a second cell selection element 41 are included.

<Fourth Wiring and Second Cell Selection Element>

The fourth wiring 40 connects the magnetoresistance effect elements 10to the second cell selection elements 41. One end of themagnetoresistance effect element 10 of the fourth wiring 40 is connectedto a third connection point 20C. The third connection point 20C isprovided at a position at which it overlaps the magnetoresistance effectelement 10 from the lamination direction of the magnetoresistance effectelement 10 in a plan view (refer to FIG. 11). The third connection point20C is provided on the surface of the spin-orbit torque wiring 20 on theside opposite to the magnetoresistance effect element 10.

Similarly to the second wiring 16 and the third wiring 17, a materialused for a general wiring can be used for the fourth wiring 40.

A known switching element can be used as the second cell selectionelement 41.

For example, a transistor element represented by a field effecttransistor or the like can be used.

<Write Operation and Read Operation>

In the magnetic memory 204 according to the second embodiment, a pathduring the read operation differs. The write operation is performed inthe same manner as in the magnetic memory 200 according to the firstembodiment.

Reading of the magnetic memory 204 according to the second embodiment isperformed in the following third current path.

The third current path is a path in which a current flows into the firstcontrol element 13, the first wiring 11, the magnetoresistance effectelement 10, the spin-orbit torque wiring 20, the fourth wiring 40, andthe second cell selection element 41 in that order.

The third current path is different from the second current path whichis a read path in the magnetic memory 200 according to the firstembodiment in that a current that flows into the spin-orbit torquewiring 20 has a different direction. In the second current path, acurrent flows in the extension direction of the spin-orbit torque wiring20 between the magnetoresistance effect element 10 and the third wiring17. On the other hand, in the third current path, a current flows in adirection intersecting the extension direction of the spin-orbit torquewiring 20. This is because the magnetoresistance effect element 10 andthe fourth wiring 40 are provided at positions at which the thirdconnection points overlap in the lamination direction of themagnetoresistance effect element 10.

The spin-orbit torque wiring 20 has a higher resistivity than a generalwiring such as the fourth wiring 40. The wiring resistance of thespin-orbit torque wiring 20 is a cause of the circuit resistance in theentire magnetic memory 200. When a read current during reading isapplied in a direction intersecting the spin-orbit torque wiring 20, aratio of the wiring resistance to the total circuit resistance can bereduced.

When a proportion of the wiring resistance in the entire circuit issmaller, a difference between magnetoresistive ratios of themagnetoresistance effect elements 10 is easily determined. Since themagnetic memory 204 reads data according to a difference betweenmagnetoresistive ratios of the magnetoresistance effect elements 10, thereliability of data is improved.

Third Embodiment

FIG. 12 is a schematic diagram of a circuit structure of a magneticmemory according to a third embodiment. FIG. 13 is a schematicperspective view of a circuit structure of a magnetic memory accordingto the third embodiment. In the drawings, components the same as thosein the first embodiment will be denoted with the same referencenumerals.

A magnetic memory 205 according to the third embodiment is differentfrom the magnetic memory 200 according to the first embodiment in that adata erasing element 50 and a fifth wiring 51 are included.

<Fifth Wiring and Data Erasing Element>

As shown in FIG. 12 and FIG. 13, the data erasing element 50 isconnected to the third wirings 17 connected to the spin-orbit torquewirings 20. The data erasing element 50 is connected to the secondconnection point 20B of the spin-orbit torque wiring 20 through thefifth wiring 51 and the third wirings 17.

A known switching element can be used as the data erasing element 50.For example, a transistor element represented by a field effecttransistor or the like can be used.

Similarly to the second wiring 16 and the third wiring 17, a materialused for a general wiring can be used for the fifth wiring 51.

A write operation and a read operation of the magnetic memory 205according to the third embodiment are the same as those of the magneticmemory 200 according to the first embodiment.

The magnetic memory 205 according to the third embodiment can perform anoperation of erasing data.

The erasing operation is performed by the second control element 14 andthe data erasing element 50. When the second control element 14 and thedata erasing element 50 are opened, the following fourth current path isformed.

The fourth current path is a path in which a current flows into thesecond control element 14, the second wiring 16, the spin-orbit torquewirings 20, the third wirings 17, the fifth wiring 51, and the dataerasing element 50 in that order. In this case, a potential of the dataerasing element 50 is preferably lower than a potential of the secondcontrol element 14 so that an inappropriate current path causing noiseis not formed.

When a current flows through the fourth current path, the spin currentfrom each of the spin-orbit torque wirings 20 flows the secondferromagnetic metal layer 3 of each of the magnetoresistance effectelements 10. As a result, directions of magnetization of the secondferromagnetic metal layers 3 of the magnetoresistance effect elements 10are inverted. In the fourth current path, a current is supplied to allof the spin-orbit torque wirings 20. Therefore, after a current flowsthrough the fourth current path, a direction of magnetization of thesecond ferromagnetic metal layer 3 with respect to a direction ofmagnetization of the first ferromagnetic metal layer 1 is the same as inall of the magnetoresistance effect elements 10. That is, whencollective writing is performed, data of the all of themagnetoresistance effect elements 10 becomes “1” or “0,” and data issubstantially erased.

Generally, the magnetic memory has a feature that it can maintain data.Therefore, it is important to reliably rewrite respective items of data,and collective control of data is difficult. On the other hand, there isa strong demand for collective control (erasing) of data when a datamedium is discarded.

For example, in the case of a magnetic memory that performsmagnetization inversion using a spin transfer torque (STT) effect, inorder to invert magnetization of all of the magnetoresistance effectelements, it is necessary for a current to flow parallel to thelamination direction of the magnetoresistance effect elements. This ispossible when the number of magnetoresistance effect elements is small.However, when the number of magnetoresistance effect elements increases,a current source having a very large capacity is necessary. In addition,although a current can flow for each magnetoresistance effect element,it takes a long time to erase all data. On the other hand, the magneticmemory 205 according to the present embodiment can collectively controldata.

Fourth Embodiment

FIG. 14 is a schematic diagram of a circuit structure of a magneticmemory according to a fourth embodiment. In the drawing, components thesame as those in the first embodiment will be denoted with the samereference numerals.

A magnetic memory 206 according to the fourth embodiment is differentfrom the magnetic memory 202 according to the first embodiment in that amagnetic field applying unit is included. In FIG. 14, a wiring 60 isarranged as the external magnetic field applying unit on a ferromagneticmetal layer 10. The extension direction of the wiring 60 is not limitedto the direction in FIG. 14, and it may cross the extension direction ofthe wiring 60 shown in FIG. 14.

When a current is applied to the wiring 60, a magnetic field isgenerated around the wiring 60. This magnetic field serves as anexternal magnetic field for the magnetoresistance effect element 10. Thesecond ferromagnetic metal layer 3 of the magnetoresistance effectelement 10 is influenced by the external magnetic field. When a currentflows into the wiring 60 and the external magnetic field is applied tothe magnetoresistance effect element 10, it is possible to assistmagnetization inversion by an SOT caused by a current flowing throughthe first current path and an STT caused by a current flowing throughthe second current path.

As shown in FIG. 14, the wiring 60 is formed at a height position thatis different from that of a drive element including themagnetoresistance effect element 10 and the like. Therefore, the wiring60 does not degrade integration of the magnetic memory.

The wiring 60 may be made of a highly conductive material. For example,aluminum, silver, copper, and gold can be used.

The external magnetic field applying unit is not limited to the wiring60 as shown in FIG. 14. A magnetic field generating device using a coilor the like may be used.

REFERENCE SIGNS LIST

-   -   1: First ferromagnetic metal layer    -   2: Nonmagnetic layer    -   3: Second ferromagnetic metal layer    -   5: Insulating part    -   10: Magnetoresistance effect element    -   11: First wiring    -   20: Spin-orbit torque wiring    -   21, 22: Resistor    -   13: First control element    -   14: Second control element    -   15: First cell selection element    -   16: Second wiring    -   17: Third wiring    -   40: Fourth wiring    -   41: Second cell selection element    -   50: Data erasing element    -   51: Fifth wiring    -   60: Wiring    -   100: Drive element    -   200, 201, 202, 203, 204, 205, 206: Magnetic memory

What is claimed is:
 1. A magnetic memory comprising: a magnetoresistanceeffect element that includes a first ferromagnetic metal layer in whicha magnetization direction is fixed, a second ferromagnetic metal layerfor a magnetization direction to be changed, and a nonmagnetic layerthat is provided between the first ferromagnetic metal layer and thesecond ferromagnetic metal layer; a plurality of drive elements, each ofwhich is connected to the second ferromagnetic metal layer of themagnetoresistance effect element and includes spin-orbit torque wiringsextending in a direction intersecting a lamination direction of themagnetoresistance effect element; a plurality of first control elementsthat are connected to each of the first ferromagnetic metal layers ofthe plurality of drive elements; at least one second control elementthat is connected to a first connection point of spin-orbit torquewirings of at least two drive elements among the plurality of driveelements; and a plurality of first cell selection elements, each ofwhich is connected to each of second connection points of the spin-orbittorque wirings of the plurality of drive elements, respectively, whereinthe spin-orbit torque wirings include a nonmagnetic metal having a delectron or a f electron in the outermost shell and having an atomicnumber of 39 or higher.
 2. The magnetic memory according to claim 1,wherein the magnetoresistance effect element is interposed between thefirst connection point and the second connection point when viewed fromthe lamination direction.
 3. The magnetic memory according to claim 1,further comprising: a plurality of second cell selection elements, eachof which is connected to each of third connection points of theplurality of spin-orbit torque wirings, wherein the third connectionpoints are provided at positions at which the third connection pointsoverlap the magnetoresistance effect element when viewed from thelamination direction.
 4. The magnetic memory according to claim 1,further comprising: a data erasing element that is connected to each ofthe second connection points of the plurality of spin-orbit torquewirings and is configured to collectively control directions ofmagnetization of the second ferromagnetic metal layers of the pluralityof magnetoresistance effect elements.
 5. The magnetic memory accordingto claim 1, wherein, when the first wiring is connected to the pluralityof magnetoresistance effect elements, a rectifying element is providedbetween each of the plurality of magnetoresistance effect elements andthe first control element.
 6. The magnetic memory according to claim 1,wherein a potential of the first control element is higher than apotential of the second control element.
 7. A magnetic memorycomprising: a magnetoresistance effect element that includes a firstferromagnetic metal layer in which a magnetization direction is fixed, asecond ferromagnetic metal layer for a magnetization direction to bechanged, and a nonmagnetic layer that is provided between the firstferromagnetic metal layer and the second ferromagnetic metal layer; aplurality of drive elements, each of which is connected to the secondferromagnetic metal layer of the magnetoresistance effect element andincludes spin-orbit torque wirings extending in a direction intersectinga lamination direction of the magnetoresistance effect element; aplurality of first control elements that are connected to each of thefirst ferromagnetic metal layers of the plurality of drive elements; atleast one second control element that is connected to a first connectionpoint of spin-orbit torque wirings of at least two drive elements amongthe plurality of drive elements; and a plurality of first cell selectionelements, each of which is connected to each of second connection pointsof the spin-orbit torque wirings of the plurality of drive elements,respectively, wherein an area resistance of the nonmagnetic layer ishigher than 1000 Ω·μm².
 8. The magnetic memory according to claim 7,wherein the spin-orbit torque wirings include a nonmagnetic metal havinga d electron or a f electron in the outermost shell and having an atomicnumber of 39 or higher.
 9. A magnetic memory comprising: amagnetoresistance effect element that includes a first ferromagneticmetal layer in which a magnetization direction is fixed, a secondferromagnetic metal layer for a magnetization direction to be changed,and a nonmagnetic layer that is provided between the first ferromagneticmetal layer and the second ferromagnetic metal layer; a plurality ofdrive elements, each of which is connected to the second ferromagneticmetal layer of the magnetoresistance effect element and includes aspin-orbit torque wiring extending in a direction intersecting alamination direction of the magnetoresistance effect element; at leastone first control element that is connected to the first ferromagneticmetal layer of at least two drive elements among the plurality of driveelements; a plurality of second control elements, each of which isconnected to each of the first connection points, respectively of thespin-orbit torque wirings of the plurality of drive elements; and aplurality of first cell selection elements, each of which is connectedto each of second connection points of the spin-orbit torque wirings ofthe plurality of drive elements, wherein the spin-orbit torque wiringsinclude a nonmagnetic metal having a d electron or a f electron in theoutermost shell and having an atomic number of 39 or higher.
 10. Amagnetic memory comprising: a magnetoresistance effect element thatincludes a first ferromagnetic metal layer in which a magnetizationdirection is fixed, a second ferromagnetic metal layer for amagnetization direction to be changed, and a nonmagnetic layer that isprovided between the first ferromagnetic metal layer and the secondferromagnetic metal layer; a plurality of drive elements, each of whichis connected to the second ferromagnetic metal layer of themagnetoresistance effect element and includes a spin-orbit torque wiringextending in a direction intersecting a lamination direction of themagnetoresistance effect element; at least one first control elementthat is connected to the first ferromagnetic metal layer of at least twodrive elements among the plurality of drive elements; a plurality ofsecond control elements, each of which is connected to each of the firstconnection points, respectively of the spin-orbit torque wirings of theplurality of drive elements; and a plurality of first cell selectionelements, each of which is connected to each of second connection pointsof the spin-orbit torque wirings of the plurality of drive elements,wherein an area resistance of the nonmagnetic layer is higher than 1000Ω*μm².